Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio Platforms

R. Simons, S. Waldstein
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Abstract

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, Psat of 43 dBm (20 W CW) at X-band, and Psat of >50 dBm (>100 W Pulsed) at X-band.
基于可重构氮化镓的认知无线电平台全固态微波功率模块
本文提出了一种新型可重构S / x波段氮化镓(GaN)全固态微波功率模块(SSMPM)的设计、集成和性能的概念验证(POC),用于认知无线电(CR)的发射模块。SSMPM通过双工和高功率开关协同集成多个放大器,使单个SSMPM能够作为S / x波段放大器,用于遥测、跟踪和命令(TT&C)、电信和科学数据下行链路,或作为x波段雷达,用于行星探测航天器上的接近感测。在这种SSMPM中,电场整形场板(FP)集成到GaN高电子迁移率晶体管(hemt)上,为恶劣的空间条件下的操作提供了更高的性能和可靠性。该SSMPM能够在s波段提供39 dBm (8 W连续波)的饱和功率(Psat),在x波段提供43 dBm (20 W连续波)的饱和功率(Psat),在x波段提供>50 dBm (>100 W脉冲)的Psat。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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