Influence of ambient temperature on electrical properties of varistor-positor structure

A. Ivanchenko, A. Tonkoshkur
{"title":"Influence of ambient temperature on electrical properties of varistor-positor structure","authors":"A. Ivanchenko, A. Tonkoshkur","doi":"10.15222/tkea2022.1-3.03","DOIUrl":null,"url":null,"abstract":"Recently, the combined two-layer structure based on varistor ceramics and polymer posistor nanocomposites with carbon filler (known as PolySwitch resettable fuses) has been seen as one of the promising elements for protecting electrical circuits from long-term overvoltages. The varistor and posistor layers are in thermal contact. The main functional property of such a structure is a sharp increase (by several orders of magnitude) in the electrical resistance of the posistor nanocomposite layer during the transfer of thermal energy from the varistor layer heated by overvoltage. Detailed information about the behavior of such combined varistor-posistor structures under different conditions, particularly in different temperature conditions, is necessary for the effective technical application of such structures as electrothermal overvoltage limiters. This paper offers research results on the effect of ambient temperature on the electrical characteristics of such voltage limiters. Structures based on metal oxide ceramics used in the production of serial varistors VCR 14D and a posistor nanocomposite for FRX-type PPTC fuses were used in the experiments of this study. It has been established that with an increase in the ambient temperature, the temperature and output voltage of such a device change insignificantly in the limitation region, while the current and power dissipation of the layers significantly decrease. At a fixed ambient temperature, the total power dissipated by the varistor and posistor layers practically does not change in the range of input voltage limitation. The dependence of the power dissipated by the varistor layer on the input voltage is identical to the analogous dependence of the current, and the power dissipation of the posistor layer tends to increase.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Технология и конструирование в электронной аппаратуре","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15222/tkea2022.1-3.03","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Recently, the combined two-layer structure based on varistor ceramics and polymer posistor nanocomposites with carbon filler (known as PolySwitch resettable fuses) has been seen as one of the promising elements for protecting electrical circuits from long-term overvoltages. The varistor and posistor layers are in thermal contact. The main functional property of such a structure is a sharp increase (by several orders of magnitude) in the electrical resistance of the posistor nanocomposite layer during the transfer of thermal energy from the varistor layer heated by overvoltage. Detailed information about the behavior of such combined varistor-posistor structures under different conditions, particularly in different temperature conditions, is necessary for the effective technical application of such structures as electrothermal overvoltage limiters. This paper offers research results on the effect of ambient temperature on the electrical characteristics of such voltage limiters. Structures based on metal oxide ceramics used in the production of serial varistors VCR 14D and a posistor nanocomposite for FRX-type PPTC fuses were used in the experiments of this study. It has been established that with an increase in the ambient temperature, the temperature and output voltage of such a device change insignificantly in the limitation region, while the current and power dissipation of the layers significantly decrease. At a fixed ambient temperature, the total power dissipated by the varistor and posistor layers practically does not change in the range of input voltage limitation. The dependence of the power dissipated by the varistor layer on the input voltage is identical to the analogous dependence of the current, and the power dissipation of the posistor layer tends to increase.
环境温度对压敏电阻-定位器结构电性能的影响
近年来,基于压敏电阻陶瓷和聚合物正极纳米复合材料与碳填料的复合两层结构(称为PolySwitch可复位熔断器)被认为是保护电路免受长期过电压影响的有前途的元件之一。压敏电阻层和正极电阻层是热接触的。这种结构的主要功能特性是在过电压加热的压敏电阻层的热能传递过程中,正极纳米复合材料层的电阻急剧增加(几个数量级)。在不同的条件下,特别是在不同的温度条件下,有关这种组合压敏电阻-正极器结构的行为的详细信息,对于电热过电压限制器等结构的有效技术应用是必要的。本文给出了环境温度对这类限压器电特性影响的研究结果。实验采用了用于VCR 14D系列压敏电阻生产的基于金属氧化物陶瓷的结构和用于frx型PPTC熔断器的正极纳米复合材料。结果表明,随着环境温度的升高,器件的温度和输出电压在限制区内变化不大,而各层的电流和功耗显著降低。在一定的环境温度下,压敏电阻层和正极层所消耗的总功率在输入电压限制范围内几乎没有变化。压敏电阻层耗散的功率对输入电压的依赖性与电流的类似依赖性相同,并且正极电阻层的耗散有增加的趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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