Simulations of an InGaP/GaAs/SiGe tandem solar cell using AMPS

Abstract

In this paper, numerical simulations of triple junction solar cells based Indium gallium phosphide (InGaP), Gallium arsenide (GaAs) and Silicon Germanium (SiGe) electrical characteristics are performed using AMPS 1D. The spectral response is simulated under AM1.5 illumination. In this work, where the single InGaP solar cell used as the top cell, the single GaAs used middle cell and the single SiGe solar cell used as the bottom cell in the tandem configuration. Several parameters of this triple cell structure have been studied such as the effect of the thicknesses of the layers of InGaP solar cell and recombination velocity.