Modelling the clamping force distribution among chips in press-pack IGBTs using the finite element method

A. Hasmasan, C. Busca, R. Teodorescu, L. Helle
{"title":"Modelling the clamping force distribution among chips in press-pack IGBTs using the finite element method","authors":"A. Hasmasan, C. Busca, R. Teodorescu, L. Helle","doi":"10.1109/PEDG.2012.6254091","DOIUrl":null,"url":null,"abstract":"In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insulated gate bipolar transistors) is presented, which can be used to calculate the clamping force distribution among chips under various clamping conditions. The clamping force is an important parameter for the chip, because it influences contact electrical resistance, contact thermal resistance and power cycling capability. Ideally, the clamping force should be equally distributed among chips, in order to maximize the reliability of the PP IGBT. The model is built around a hypothetical PP IGBT with 9 chips, and it has numerous simplifications in order to reduce the simulation time as much as possible. The developed model is used to analyze the clamping force distribution among chips, in various study cases, where uniform and non-uniform clamping pressures are applied on the studied PP IGBT.","PeriodicalId":146438,"journal":{"name":"2012 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDG.2012.6254091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insulated gate bipolar transistors) is presented, which can be used to calculate the clamping force distribution among chips under various clamping conditions. The clamping force is an important parameter for the chip, because it influences contact electrical resistance, contact thermal resistance and power cycling capability. Ideally, the clamping force should be equally distributed among chips, in order to maximize the reliability of the PP IGBT. The model is built around a hypothetical PP IGBT with 9 chips, and it has numerous simplifications in order to reduce the simulation time as much as possible. The developed model is used to analyze the clamping force distribution among chips, in various study cases, where uniform and non-uniform clamping pressures are applied on the studied PP IGBT.
采用有限元方法对压装式igbt中切屑间的夹紧力分布进行了建模
本文建立了基于有限元法的PP(压包)绝缘栅双极晶体管的力学模型,可用于计算不同夹紧条件下芯片间夹紧力的分布。夹紧力是影响芯片接触电阻、接触热阻和功率循环能力的重要参数。理想情况下,夹紧力应均匀分布在芯片之间,以最大限度地提高PP IGBT的可靠性。该模型是围绕一个具有9个芯片的假设PP IGBT构建的,并且为了尽可能减少仿真时间,它进行了许多简化。利用所建立的模型,分析了在均匀和非均匀夹紧压力作用于所研究的PP IGBT的各种研究情况下,夹紧力在切屑之间的分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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