Investigation into the Loss Density Distribution of IGBT Devices

Abstract

The major cause of power semiconductor devices failure is heat. This is no surprise since industry and commercial applications continually require higher power densities and decreased packaging solutions. The pressure is now concentrated on thermal simulation tools that need to take into account detailed device structures and different physical phenomena/parameters that take place inside the semiconductor structure during operation. This paper explains a method to calculate in detail the power loss distribution inside the IGBT device