Monolithic integration of the vertical IGBT and intelligent protection circuits

Abstract

In this paper, we have developed a new smart discrete technology to monolithically integrate the high voltage vertical IGBT with low-voltage NMOS protection circuitry by adding a p-well step to the conventional IGBT process. Two new 600 V intelligent IGBTs, based on the same technology but using different protection schemes, are reported for the first time. The first intelligent IGBT provides protection against over-current and over-temperature conditions. The second intelligent IGBT provides protection against short circuit conditions by means of sensing collector voltage. The typically observed characteristics of the intelligent IGBT's include a forward voltage of 1.4 V at a current density of 100 A/cm/sup 2/, a turn-off fall time of 200 ns, and a short-circuit withstand time at 125/spl deg/C of more than 50 /spl mu/s.