Macro-modeling for MOS device simulation

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004026

T. Rodrigo-Rodriguez, E. Gutiérrez-D., R. Arturo-Sarmiento, S. Selberherr

引用次数: 0

Abstract

By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.

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MOS器件仿真宏建模

利用MOS二极管理论，对MOS器件中的载流子、电流分布和迁移率进行了评价。对于迁移率、载流子浓度和横向电场等参数，使用简单的解析表达式。LDD MOSFET和n阱电阻的实验和模拟结果一致，探测该方法适合作为快速模型评估的插入式模型测试仪。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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