Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy

Abstract

Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10/sup -4/ rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.