Raman emission in porous silicon at 1.5 micron: a possible approach

Abstract

In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported. Finally, we discuss about the possibility to enhance the Raman gain coefficient and to eliminate two photon absorption in porous silicon.