Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding

Abstract

The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique used for stacks allows to solve many packaging problems, in particular - reduction of thermal resistance and incresing in operation temperature.