INVESTIGATION OF STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF ITO FILMS DEPOSITED AT DIFFERENT PLASMA POWERS: ENHANCED PERFORMANCE AND EFFICIENCY IN SHJ SOLAR CELLS

Eurasian Journal of Science Engineering and Technology Pub Date : 2023-06-15 DOI:10.55696/ejset.1297942

Emre Kartal, İlker Duran, E. Damgaci, A. Seyhan

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引用次数: 1

Abstract

This article presents an investigation into the structural, optical, and electrical properties of Indium Tin Oxide (ITO) films that were deposited utilizing various plasma powers. The transmittance values in the visible region were measured, revealing that the ITO film deposited at 2050 W exhibited the highest transmittance (81%). Additionally, the sheet resistance values of all films were analyzed, indicating that the ITO film deposited at 2050 W had the lowest sheet resistance (64.9 Ω/sq). By means of XRD analysis, the structural properties of the films were meticulously scrutinized, and the distinctive diffraction peaks associated with the ITO films were successfully identified. Notably, the ITO film deposited at 2050 W demonstrated superior performance compared to the other films deposited using various plasma powers. Finally, we report a noteworthy efficiency of 17.03% achieved in the SHJ solar cell fabricated with the ITO film deposited at 2050 W on a 5x5 cm2 n-type Si substrate.

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在不同等离子体功率下沉积的ITO薄膜的结构、光学和电学性质的研究:在SHJ太阳能电池中增强的性能和效率

本文研究了利用不同等离子体功率沉积的氧化铟锡(ITO)薄膜的结构、光学和电学性能。测量了可见光区的透过率值，发现在2050 W沉积的ITO薄膜的透过率最高(81%)。此外，对所有薄膜的片电阻值进行了分析，表明在2050 W沉积的ITO薄膜的片电阻值最低(64.9 Ω/sq)。通过XRD分析，对薄膜的结构特性进行了细致的研究，并成功地识别出与ITO薄膜相关的独特衍射峰。值得注意的是，与使用各种等离子体功率沉积的其他薄膜相比，在2050 W下沉积的ITO薄膜表现出优越的性能。最后，我们报告了在5x5 cm2 n型Si衬底上以2050 W沉积ITO薄膜制成的SHJ太阳能电池的效率达到了17.03%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Eurasian Journal of Science Engineering and Technology

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