Nonlinear circular dichroism in GaAs nanowires partially covered by gold (Conference Presentation)

A. Belardini, J. Collins, D. Hooper, G. Leahu, E. Petronijevic, M. Centini, T. Hakkarainen, E. Koivusalo, M. R. Piton, S. Suomalainen, M. Guina, V. Valev, C. Sibilia
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Abstract

Asymmetric nanostructures can mimic a chiral response when circular polarized light interacts with the structures under particular angle of incidence [1]. This phenomenon is called ‘extrinsic chirality’ and usually is present under linear optical investigation with low visibility. Due to the fact that optical second harmonic generation is possible only in samples with some degree of asymmetry, this can be used in order to investigate the extrinsic chirality with a background free technique, thus inducing a high visibility of the artificial circular dichroism [2,3]. Here we present the second harmonic generation (SHG) measurements obtained on samples composed by GaAs nanowires grown on silicon. The wires present resonant leaky modes around 800nm and at 400nm due to the high refractive index contrast ratio between wires and air, even if these wavelengths lie on the absorption band of GaAs [4]. The measurements performed on this sample present good SHG signal due to the second order nonlinear term of GaAs, but did not present any circular dichroism (SHG-CD). By coating the sample with a 20nm thin layer of gold deposited asymmetrically, by evaporating the metal only from one side of the nanowires, the symmetry of the structure is broken, thus induced high SHG-CD. The SHG-CD is measured by shining the sample with circular polarized pump light at the fundamental wavelength of 800nm and by revealing the second harmonic signal at 400nm in s or p polarization, as a function of sample rotation. Four samples were measured with GaAs wires of about 5 micron in length with different diameters ranging from 140nm to 200nm. In this case it is possible to explore different resonance conditions and different SHG-CD is revealed. For each sample, the measured were carried out before and after the asymmetric gold layer deposition, thus allowing direct comparison of the results. References [1] A. Belardini, M. C. Larciprete, M. Centini, E. Fazio, C. Sibilia, D. Chiappe, C. Martella, A. Toma, M. Giordano, and F. Buatier de Mongeot, Phys. Rev. Lett. 107, 257401 (2011). [2] A. Belardini, M. Centini, G. Leahu, D. C. Hooper, R. Li Voti, E. Fazio, J. W. Haus, A. Sarangan, V. K. Valev, C. Sibilia, Sci. Rep. 2016, 6, 31796. [3] G. Leahu, E. Petronijevic, A. Belardini et al., Adv. Optical Mater. 2017, 1601063 (2017). [4] G. Leahu, E. Petronijevic, A. Belardini, M. Centini, R. Li Voti, T. Hakkarainen, E. Koivusalo, M. Guina, C. Sibilia. Sci. Rep. 7, 2833 (2017).
部分金覆盖的砷化镓纳米线的非线性圆二色性(会议报告)
当圆偏振光在特定入射角下与纳米结构相互作用时,非对称纳米结构可以模拟手性反应。这种现象被称为“外在手性”,通常存在于低能见度的线性光学研究中。由于光学二次谐波只可能在具有一定程度不对称的样品中产生,因此可以使用无背景技术来研究外部手性,从而诱导人工圆二色性的高可见性[2,3]。本文介绍了在硅上生长的砷化镓纳米线组成的样品上获得的二次谐波产生(SHG)测量结果。由于金属丝与空气之间的高折射率对比度,金属丝在800nm左右和400nm处呈现共振漏模,即使这些波长位于GaAs[4]的吸收带上。由于GaAs的二阶非线性项,对该样品进行的测量显示出良好的SHG信号,但没有出现任何圆二色性(SHG- cd)。通过在样品表面非对称地镀上20nm的薄层金,通过只从纳米线的一侧蒸发金属,破坏了结构的对称性,从而诱导出高SHG-CD。SHG-CD的测量方法是在基波长为800nm的圆偏振泵浦光照射样品,并在400nm处以s或p偏振显示二次谐波信号,作为样品旋转的函数。用长度约为5微米、直径从140nm到200nm不等的砷化镓线对四个样品进行了测量。在这种情况下,可以探索不同的共振条件,揭示不同的SHG-CD。对于每个样品,测量是在不对称金层沉积之前和之后进行的,从而可以直接比较结果。参考文献bbb A. Belardini, M. C. Larciprete, M. Centini, E. Fazio, C. Sibilia, D. Chiappe, C. Martella, A. Toma, M. Giordano和F. Buatier de Mongeot, Phys。生态学报,2011,(5):391 - 391A. Belardini, M. Centini, G. Leahu, D. C. Hooper, R. Li Voti, E. Fazio, J. W. Haus, A. Sarangan, V. K. Valev, C. Sibilia, Sci。众议员2016,6,31796李建军,陈建军,陈建军,等。光学材料学报,2017,16 (4):437 - 437G. Leahu, E. Petronijevic, A. Belardini, M. Centini, R. Li Voti, T. Hakkarainen, E. Koivusalo, M. Guina, C. Sibilia。科学。众议员7,2833(2017)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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