Comprehensive Design-oriented FDSOI EKV Model

Abstract

The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the back-gate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold voltage versus the back-gate voltage, but also the changes in the slope factor and low-field mobility. This results in a normalized transconductance efficiency that becomes independent of the back-gate voltage over a wide range. The model is validated thanks to the use of the Python-based automated parameter extraction tool on a 22 nm FDSOI technology.