Terahertz travelling wave amplifier design using Ballistic Deflection Transistor

Abstract

In this paper, we present a Terahertz (THz) Travelling-Wave-Amplifier (TWA) design using a Ballistic Deflection Transistor (BDT). The BDT is an emerging functional device based on InGaAs/InAlAs/InP, which can operate at THz frequencies. A transistor model is proposed, based on data provided by Monte Carlo simulation. We have developed a new nearly lossless THz transmission line (0.46dB/mm over 0.8–1.5THz simulated in ANSYS HFSS), called Parallel Plate Dielectric Waveguide with Signal line (PPDWS), and we are able to design a 24-stage BDT TWA with an ADS simulated gain over 10dB at 1–1.5THz. This THz BDT amplifier design opens up new possibilities by increasing the speed by 100 times compared to existing technologies.