Twin MONOS cell with dual control gates

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852794

Y. Hayashi, S. Ogura, T. Saito, T. Ogura

引用次数: 12

Abstract

A new twin MONOS cell for high density, high speed and low power program is presented having a proposed hard bit density of 3F/sup 2/ and soft-bit density of 1.5 F/sup 2/ with 2-bit multilevel storage, program speed of <1 usec and program current of /spl sim/10 uA/cell.

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双MONOS细胞与双控制门

提出了一种用于高密度、高速和低功耗程序的新型双MONOS单元，其硬位密度为3F/sup 2/，软位密度为1.5 F/sup 2/，具有2位多电平存储，程序速度<1 usec，程序电流为/spl sim/10 uA/cell。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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