Photorefractive Effect Due To Holes In Undoped BGO Crystals

G. Pauliat, M. Allain, J. Launay, G. Roosen
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引用次数: 1

Abstract

The investigation of the photorefractive properties in various sillenite crystals (Bil2Si020 - Bil2Ge020) is presented. While in some crystals we find a photorefractive effect governed by electron migration as commonly admitted, we, for the first time, demonstrate that holes play the most important role in the grating recording process in some EGO samples. Thus controlling the charge carrier responsible for the photorefractive effect might lead to an optimisation of the material properties for device design.
未掺杂BGO晶体中空穴的光折变效应
研究了不同硅辉石晶体(Bil2Si020 - Bil2Ge020)的光折变特性。虽然在一些晶体中,我们发现了通常承认的由电子迁移控制的光折变效应,但我们首次证明了空穴在一些EGO样品的光栅记录过程中起着最重要的作用。因此,控制负责光折变效应的电荷载流子可能导致器件设计中材料特性的优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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