A new structure for reduction of the leakage currrent in the low temperature Poly-Si TFTs fabricated by the MILC process

Abstract

Poly-Si TFTs were fabricated at 500 t' by a Ni offset metal induced lateral crystallization(MILC) method. The poly-Si TFTs fabricated by the Ni offset MILC showed lower leakage current than those fabricated by conventional Ni self aligned MILC without sacrifice of field eff ect mobility. The decrease of leakage current resulted from the exclusion of Ni rich phase at near the