A DC model for power switching transistors suitable for computer-aided design and analysis

Abstract

There exists a need for a reasonably accurate model for bipolar junction power switching tran­sistors whose parameters can be readily obtained by the circuit design engineer, and which can be conveniently incorporated into standard computer­-based circuit analysis programs. This paper presents such a dc model whose formulation results entirely from measurements which may be made with standard laboratory equipment. Measurement procedures, as well as a comparison between actual and computed results, are presented.