Indium and nitrogen K-edge X-ray absorption spectroscopy of InxGai-xN

Abstract

InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.