Comparative Study of FinFET Versus HKMG Bulk CMOS in 16 nm Technology: Current Mirror Perspective

Abstract

The aim of this work is to compare the performance of various current mirror (CM) topologies utilizing FinFET and high-k/metal-gate (HKMG) bulk CMOS devices. Performance parameters such as mirroring accuracy, input resistance, output resistance, compliance voltage, bandwidth and power consumption are the indicators for the comparison criteria. Four current mirror topologies are designed and simulated in both FinFET and HKMG bulk CMOS technologies. For low input currents, simulation results of FinFET-based CMs show better mirroring accuracy, higher output resistance and bandwidth as well as lower power consumption. On the other hand, HKMG bulk CMOS based CMs shows lower input resistance and input compliance voltage for simple CM, cascode CM, regulated cascode CM and self-biased cascode CM.