Electrostatic discharge protection in 250 nm BCD technology for multi-functional control integrated circuits for power converters

M. S. Karpovich, Vasily D. Lys, K. E. Blum, V. Vasilyev
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引用次数: 3

Abstract

This work is devoted to the designing and development of Electrostatic Discharge (ESD) Protection elements for Integrated Circuits in 250 nm BCD (Bipolar, CMOS, DMOS) mixed technology. ESD protection solution has been developed for Multi-Functional Control ICs dedicated to the implementation in AC/DC and DC/DC Power Supply Units. This solution assumes using of different voltage domains and based on current diversion with the use of different protective elements (CLAMP). According to the simulation performed, ESD protection solution shows 2000 V protection in MFC IC developed according to above mentioned IC technology.
功率变换器多功能控制集成电路中250nm BCD技术的静电放电保护
本课题致力于250nm BCD(双极、CMOS、DMOS)混合工艺集成电路静电放电(ESD)保护元件的设计与开发。ESD保护解决方案是为专用于AC/DC和DC/DC电源单元的多功能控制ic开发的。该解决方案假设使用不同的电压域,并基于使用不同保护元件(CLAMP)的电流分流。仿真结果表明,根据上述集成电路技术开发的MFC集成电路具有2000 V的ESD保护方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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