System LSI Embedded Ferroelectric Memory Technology

Abstract

System LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed. The key technology of the low-voltage operation is the newly developed stacked ferroelectric capacitors completely encapsulated by hydrogen barriers, which enable us to eliminate hydrogen reduction of the ferroelectric thin film during the integration process. This technology is applied for not only the planer stachked ferroelectric capacitors but also the three-dimensional (3-D) capacitors, which is the most promising for mass production of 0.18-mum low-power system LSI-embedded FeRAM and beyond.