X-Band 11W AlGaN/GaN HEMT power MMICs

Abstract

AIGaN/GaN HEMT power MIMIC which is designed in microstrip technology on Sl-SiC substrate is presented in this work. The chip size is only 2.0 mmtimes1.1 mmtimes0.08 mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6 GHz and delivers a pulsed output power of 11.1 W at 9.7 GHz under a drain bias of 30 V. The linear gain of the MMIC is about 10 dB which is much lower than the simulated value of 15 dB. Further optimization of the MMIC processing and circuit design is necessary to improve the performances of the MMIC.