Exploration of a Low-power CMOS Voltage Squarer

V. O. Costa, A. Aita, Adilson J. Cardoso, C. Rodrigues, Jefferson Luiz B. Marques
{"title":"Exploration of a Low-power CMOS Voltage Squarer","authors":"V. O. Costa, A. Aita, Adilson J. Cardoso, C. Rodrigues, Jefferson Luiz B. Marques","doi":"10.1109/SBCCI53441.2021.9530000","DOIUrl":null,"url":null,"abstract":"This paper addresses a reported voltage multiplier and explores its use as a voltage squarer with the aim of reducing the power consumption and area. The proposed circuit can operate with a maximum gain of -30.4 up 250kHz. These ones have also shown the total power consumption is about 501 nW at VDD= 1.8 V. In order to reduce the squarer sensitivity to process variations over corners, a bias circuit also sensitive to these variations was used to mitigate such effects. This was verified by pre- and post-layout simulations using transistor's models of standard 0.18 µ m CMOS process.","PeriodicalId":270661,"journal":{"name":"2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBCCI53441.2021.9530000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper addresses a reported voltage multiplier and explores its use as a voltage squarer with the aim of reducing the power consumption and area. The proposed circuit can operate with a maximum gain of -30.4 up 250kHz. These ones have also shown the total power consumption is about 501 nW at VDD= 1.8 V. In order to reduce the squarer sensitivity to process variations over corners, a bias circuit also sensitive to these variations was used to mitigate such effects. This was verified by pre- and post-layout simulations using transistor's models of standard 0.18 µ m CMOS process.
一种低功耗CMOS电压平方器的研制
本文讨论了一种电压倍增器,并探讨了其作为电压平方器的用途,目的是减少功耗和面积。所提出的电路可以在250kHz上以-30.4的最大增益工作。这些数据还显示,在VDD= 1.8 V时,总功耗约为501 nW。为了减少平方灵敏度的过程变化过角,偏置电路也敏感的这些变化被用来减轻这种影响。利用标准0.18 μ m CMOS工艺的晶体管模型进行了布局前和布局后仿真,验证了这一点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信