V. O. Costa, A. Aita, Adilson J. Cardoso, C. Rodrigues, Jefferson Luiz B. Marques
{"title":"Exploration of a Low-power CMOS Voltage Squarer","authors":"V. O. Costa, A. Aita, Adilson J. Cardoso, C. Rodrigues, Jefferson Luiz B. Marques","doi":"10.1109/SBCCI53441.2021.9530000","DOIUrl":null,"url":null,"abstract":"This paper addresses a reported voltage multiplier and explores its use as a voltage squarer with the aim of reducing the power consumption and area. The proposed circuit can operate with a maximum gain of -30.4 up 250kHz. These ones have also shown the total power consumption is about 501 nW at VDD= 1.8 V. In order to reduce the squarer sensitivity to process variations over corners, a bias circuit also sensitive to these variations was used to mitigate such effects. This was verified by pre- and post-layout simulations using transistor's models of standard 0.18 µ m CMOS process.","PeriodicalId":270661,"journal":{"name":"2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBCCI53441.2021.9530000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper addresses a reported voltage multiplier and explores its use as a voltage squarer with the aim of reducing the power consumption and area. The proposed circuit can operate with a maximum gain of -30.4 up 250kHz. These ones have also shown the total power consumption is about 501 nW at VDD= 1.8 V. In order to reduce the squarer sensitivity to process variations over corners, a bias circuit also sensitive to these variations was used to mitigate such effects. This was verified by pre- and post-layout simulations using transistor's models of standard 0.18 µ m CMOS process.