Temperature Reliability Exploration of GaN HEMT E/F3 Power Amplifier

Abstract

In order to study the temperature behavior for GaN HEMT E/F3 power amplifier (PA), the series temperature reliability tests are carried out here. The results show that the DC and AC characteristics of this PA have degraded significantly with the rising temperature. Therefore, temperature is an important factor for the GaN HEMT E/F3 PA. In addition, the temperature characteristics of this PA are improved by increasing the substrate doping concentration, selecting the appropriate gate width and designing a reasonable temperature compensation circuit. This research can give an important guidance for the design of the E/F3 power amplifier.