Non-linear compact thermal model of IGBTs

Abstract

In the paper the form of the non-linear compact thermal model of the IGBT is proposed. This model is based on the idea of transient thermal impedance. It takes into account influence of the power dissipated in the investigated transistor on parameters describing thermal resistance. The form of the model, the method of model parameters estimation and some results of calculations and measurements are presented. Superiority of the proposed thermal model over the classical linear thermal model is shown experimentally.