Impact of IGBT behavior on design optimization of soft switching inverter topologies

Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting Pub Date : 1993-10-02 DOI:10.1109/IAS.1993.298992

A. Kurnia, H. Cherradi, D. Divan

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引用次数: 45

Abstract

A detailed examination of the factors that affect the design of resonant DC link inverters using IGBTs (insulated-gate bipolar transistors) is presented. A detailed design of a 50 kVA IGBT-based resonant DC link inverter is used as a design example. Measured loss data for IGBTs operating under zero voltage switching conditions are provided, and various loss mechanisms are identified. An approach that includes measured device characteristics in the converter design optimization process is proposed. The suitability of the resonant DC link inverters in view of better device understanding is also addressed. It is shown that performance of this family of power converters can be substantially improved by properly choosing the resonant components for a desired link frequency. Under such criteria, loss calculation and comparison with the family of PWM (pulse-width-modulated) VSIs has highlighted the fact that the resonant link inverter can offer a far better performance in terms of device loss reduction with a moderate peak voltage stress (K) of 1.3 or 1.4.<>

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IGBT行为对软开关逆变器拓扑优化设计的影响

详细分析了影响使用igbt(绝缘栅双极晶体管)设计谐振直流链路逆变器的因素。以50kva igbt谐振型直流链路逆变器的详细设计为例。提供了在零电压开关条件下工作的igbt的测量损耗数据，并确定了各种损耗机制。提出了一种在变换器设计优化过程中考虑被测器件特性的方法。考虑到更好的器件理解，还讨论了谐振直流链路逆变器的适用性。结果表明，通过正确选择相应链路频率的谐振元件，可以大大提高功率变换器的性能。在这样的标准下，损耗计算和与PWM(脉宽调制)vsi家族的比较突出了这样一个事实，即谐振链路逆变器在降低器件损耗方面可以提供更好的性能，峰值电压应力(K)为1.3或1.4。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting

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