Generation-recombination noise characteristics of GaAs MESFETs

Abstract

Low frequency noise measurements were carried out using MESFET devices at different frequency and temperature ranges. The spectra obtained in the ohmic regime are due to several 1/f and generation-recombination (g-r) noise components. This method can be used as a diagnostic tool to model the nature of the time varying process and to uncover the location of the deep traps. Different trap levels were detected and the drain/gate current noise suggested as good indicators of quality of a MESFET. The theory predicts the experimentally observed trend of g-r noise dependence on both gate and drain voltages. The device structure as well as the materials from which it is composed influenced the properties of traps