Magneto-thermoelectric properties of undoped and doped Bi-Sb single crystals

V. Grabov, O.N. Uryupin
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引用次数: 4

Abstract

Electrical resistivity /spl rho/, Seebeck coefficient /spl alpha/ and thermal conductivity /spl kappa/ of Bi/sub 1-x/Sb/sub x/ crystals were measured depending on alloy composition, doping, and crystallographic orientation, temperature in an interval 77-300 K, magnetic field up to 2 T. To prepare alloys, Bi and Sb refined up to 99.9999 at.% was used. The single crystals Bi/sub 1-x/Sb/sub x/ (0 crystals at the temperature of practical interest T=180 K have the following magneto-thermoelectric figure of merit (Z/sub 33/(B/sub 2/)): 2.79/spl middot/10/sup -3/ 1/K at B=0, 4.79/spl middot/10/sup -3/ 1/K at B=0.25 T, and 4.95/spl middot/10/sup -3/ 1/K at B=0.50 T. Caused by a magnetic field the changes of transport coefficients and Z are the result of reduction of the energy dependence of the effective relaxation time, and reduction of the partial mobility and the distinctions for light and heavy charge carriers, electrons and holes in a magnetic field. The initial conditions for obtaining the highest magneto-thermoelectric figure of merit are formed by doping by donor or acceptor impurity.
未掺杂和掺杂Bi-Sb单晶的磁热电性质
根据合金成分、掺杂、晶体取向、温度在77 ~ 300 K范围内、磁场在2 t以下,测量了Bi/sub - 1-x/Sb/sub -x/晶体的电阻率/spl rho/、塞贝克系数/spl alpha/和导热系数/spl kappa/。%被使用。单晶Bi/sub - 1-x/Sb/sub -x/(0)晶体在实际感兴趣的温度T=180 K下具有以下磁热电性能图(Z/sub 33/(B/sub 2/)):在B=0时为2.79/spl middot/10/sup -3/ 1/K,在B=0.25 T时为4.79/spl middot/10/sup -3/ 1/K,在B=0.50 T时为4.95/spl middot/10/sup -3/ 1/K,在磁场作用下输移系数和Z的变化是有效弛缓时间的能量依赖性降低、部分迁移率降低以及轻、重载流子、电子和空穴在磁场中的区别减小的结果。获得最高磁热电优值的初始条件是由供体或受体杂质掺杂形成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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