A High-order Temperature-compensated Bandgap Voltage Reference with Low Temperature Coefficient

Abstract

A high-order temperature-compensated bandgap voltage reference (BGR) with a low-temperature coefficient (TC) for high-precision applications is proposed, manufactured in a 0.18-µm CMOS process. Strong-inversion MOSFETs and forward-biased Bipolar Junction Transistors (BJTs) are employed in the proposed high-order temperature-compensated circuit, which eliminates the curvature in base-emitter voltage (VBE), so to achieve a low TC. Measurement results prove that a minimum TC of 0.7 ppm/°C over the temperature range of -25 °C to 125 °C is realized with a resistance trimming network. The line sensitivity is 0.0146%/V when supply voltage changes from 3.2 V to 3.7 V.