Silicon-organic (SOH) and plasmonic-organic (POH) hybrid integration: Extending the capabilities of silicon photonics and plasmonics

C. Koos, W. Freude, J. Leuthold, M. Kohl, L. Dalton, W. Bogaerts, M. Lauermann, A. Melikyan, S. Wolf, C. Weimann, S. Muehlbrandt, J. Pfeifle, S. Koeber, R. Palmer, P. Schindler, D. Elder
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引用次数: 2

Abstract

Summary form only given. Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration by enabling fabless fabrication and joint processing of photonic and electronic circuitry. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, thereby reducing the device footprint by more than an order of magnitude. Silicon and metals, however, fall short of certain optical properties that are indispensable for high-performance photonic devices. In particular, neither material exhibits an appreciable second-order optical nonlinearity, thereby making efficient electro-optic modulators challenging. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration, which combine silicon-on-insulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic materials. In this paper, we give an overview of our recent progress in the field of SOH [1][8] and POH [9] photonics. Our work covers basic material aspects and device concepts of highly efficient phase modulators [1], [2] and phase shifters [3]. We demonstrate Mach-Zehnder and Inphase-Quadrature(IQ-)modulators [4], [5] having energy consumptions down to a few fJ/bit [2], as well as high-speed transmission experiments using advanced modulation formats such as 16QAM at symbol rates (bit rates) of up to 40 GBd (160 Gbit/s) [6]. We further show that the extraordinarily low operating voltage of SOH modulators allows to drive them directly from standard output ports of field-programmable gate arrays (FPGA), without the need for external amplifiers and analog-to-digital converters. Such schemes can be used even if high-order modulation formats such as 16QAM are to be generated [7]. Moreover, we use SOH devices for generating broadband frequency combs, which are well suited as optical multi-wavelength sources for terabit/s transmission [8]. POH integration finally enables ultra-short phase modulators of less than 30 μm length, operating at data rates of 40 Gbit/s [9]. The POH modulators feature a flat frequency response up to at least 65 GHz, and potentially open the route for modulation at THz frequencies.
有机硅(SOH)和等离子体有机(POH)混合集成:扩展硅光子学和等离子体学的能力
只提供摘要形式。硅光子学通过实现光子和电子电路的无晶圆制造和联合加工,为廉价的高产量光电子集成提供了巨大的潜力。除了传统的介质波导外,等离子体结构也可以在硅光子平台上有效地实现,从而将器件占地面积减少了一个数量级以上。然而,硅和金属缺乏高性能光子器件不可或缺的某些光学特性。特别是,这两种材料都表现出明显的二阶光学非线性,从而使有效的电光调制器具有挑战性。这些缺陷可以通过硅-有机杂化(SOH)和等离子体-有机杂化(POH)集成的概念来克服,它们将硅-绝缘体(SOI)波导和等离子体纳米结构与有机电光材料结合起来。本文综述了近年来在SOH[1][8]和POH[9]光子学领域的研究进展。我们的工作涵盖了高效相位调制器[1],[2]和移相器[3]的基本材料和器件概念。我们演示了Mach-Zehnder和相位正交(IQ-)调制器[4],[5],其能耗低至几fJ/bit[2],以及使用先进调制格式(如16QAM)的高速传输实验,其符号速率(比特率)高达40 GBd (160 Gbit/s)[6]。我们进一步表明,SOH调制器的极低工作电压允许直接从现场可编程门阵列(FPGA)的标准输出端口驱动它们,而不需要外部放大器和模数转换器。即使要生成高阶调制格式(如16QAM),也可以使用这种方案。此外,我们使用SOH器件产生宽带频率梳,这非常适合作为光多波长源用于太比特/秒传输[8]。POH集成最终实现了长度小于30 μm的超短相位调制器,数据速率为40 Gbit/s[9]。POH调制器具有至少65 GHz的平坦频率响应,并可能为太赫兹频率的调制开辟路线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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