A. Ghazinour, P. Wennekers, R. Reuter, Yin Yi, Hao Li, T. Bohm, D. Jahn
{"title":"An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications","authors":"A. Ghazinour, P. Wennekers, R. Reuter, Yin Yi, Hao Li, T. Bohm, D. Jahn","doi":"10.1109/EMICC.2006.282785","DOIUrl":null,"url":null,"abstract":"This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devices","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devices