An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications

A. Ghazinour, P. Wennekers, R. Reuter, Yin Yi, Hao Li, T. Bohm, D. Jahn
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引用次数: 5

Abstract

This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devices
具有分频链的集成SiGe-BiCMOS低噪声发射机芯片,用于77 GHz应用
本文介绍了一种用于77 GHz FMCW雷达系统的低噪声发射芯片,该芯片由带输出缓冲器的推挽压控振荡器、分频链和峰对峰检测器组成。测量结果显示,在宽调谐范围内,两个差分50 ω负载各输出功率约为11 dBm。在100khz偏置频率下,测量到的相位噪声约为-85 dBc/Hz。该电路采用飞思卡尔半导体0.18 μ m SiGe-BiCMOS技术实现。典型的ft/fmax为200GHz/205GHz的sige - hbt被用作有源器件
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