Poly-silicon thin films and solar cells prepared by rapid thermal CVD

Abstract

Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).