Self-aligned top and bottom metal double gate low temperature poly-Si TFT fabricated at 550/spl deg/C on non-alkali glass substrate by using DPSS CW laser lateral crystallization method

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269246

A. Hara, M. Takei, K. Yoshino, F. Takeuchi, M. Chida, N. Sasaki

引用次数: 13

Abstract

Self-aligned top and bottom metal double gate (SAMDG) low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated at 550/spl deg/C using the diode pumped solid state (DPSS) CW laser lateral crystallization (CLC) method, on non-alkali glass. The current drivability of these TFTs is eight or nine times as large as that of conventional excimer laser crystallized (ELC) poly-Si TFTs. It was confirmed that the extreme high performance of SAMDG CLC poly-Si TFT was maintained for gate length of 2.0 /spl mu/m.

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采用DPSS连续波激光横向结晶法，在550/spl℃的非碱玻璃基板上制备了自对准上下金属双栅低温多晶硅TFT

采用二极管泵浦固体连续波激光横向结晶(CLC)方法，在550/spl℃的温度下，在非碱玻璃上制备了自校准上下金属双栅(SAMDG)低温多晶硅(poly-Si)薄膜晶体管。这些晶体管的可驱动性是传统准分子激光结晶(ELC)多晶硅晶体管的八到九倍。结果表明，当栅极长度为2.0 /spl mu/m时，SAMDG CLC多晶硅TFT保持了极高的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE International Electron Devices Meeting 2003

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