Numerical simulations in the development process of ultrahigh- speed MQW electroabsorption modulators

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259029

Y. Miyazaki, S. Tokizaki, E. Omura, Y. Mitsui

引用次数: 0

Abstract

Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.

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超高速MQW电吸收调制器研制过程的数值模拟

数值模拟应用于基于InGaAs/InGaAsP MQW的10 Gbps eam - dfb - ld和40 Gbps eam的开发。数值方法的覆盖范围包括EAM的传输特性和掺杂扩散以及EAM的消光比和啁啾。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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