Highly reliable GaN MOS-HFET with high short-circuit capability

Abstract

A new MOS-HFET structure of a GaN power device for highly reliable GaN MOS gates has been designed. A normally-on JFET structure is fabricated between the gate and drain of the GaN MOS-HFET. By using this technology, the reliability of the gate insulator is greatly improved under the high drain voltage of the blocking-state. The new GaN MOS-HFET also reduces saturation current in the short-circuit condition by about 30%. It is expected that this new device improves the tolerance characteristics in the short-circuit condition without the on-resistance penalty associated with conventional structures.