Preparation and characterization of zinc sulfide thin films through the sulfuration of sprayed zinc oxide thin films

M. Salah, S. Azizi, A. Boukhachem, C. Khaldi, M. Amlouk, J. Lamloumi
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引用次数: 2

Abstract

In this study, the preparation of the zinc sulfide thin film by a substitution oxygen-sulfur inside sprayed ZnO compounds are investigated. First, the spray pyrolysis method has been used to grow the ZnO layers on glass substrates at 450 °C. The annealing process time was 12 hours. After a suitable cooling phase, the whole substrate-layer was introduced into a sealed tube. Consecutively, sulfur powder was introduced and vaporized under vacuum conditions inside the sealed tube containing the formerly ZnO prepared thin film. The structural properties of the prepared samples were characterized by X-ray diffraction (XRD) technique. We found that ZnS thin film have the cubic structure with a preferred orientation along (111) plane without any impurities and secondary phases. UV-VIS measurements show that the average transmittance of the ZnS thin films is between 63 and 73%. The optical band gaps for the ZnS and ZnO thin films were estimate too and it was 3.67 - 3.28 eV respectively.
通过对喷涂氧化锌薄膜的硫化制备硫化锌薄膜及其表征
在本研究中,研究了在喷塑氧化锌化合物内部用氧-硫取代法制备硫化锌薄膜。首先,采用喷雾热解法在450℃的温度下在玻璃基板上生长ZnO层。退火时间为12小时。经过适当的冷却阶段后,将整个基板层引入密封管中。接着,将硫粉引入密封管中,在真空条件下汽化原制备的ZnO薄膜。用x射线衍射(XRD)技术对制备的样品进行了结构表征。我们发现ZnS薄膜具有沿(111)平面择优取向的立方结构,不含杂质和二次相。紫外可见测试表明,ZnS薄膜的平均透过率在63 ~ 73%之间。ZnS和ZnO薄膜的光学带隙分别为3.67 ~ 3.28 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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