A Hybrid solid-state storage architecture for the performance, energy consumption, and lifetime improvement

Guangyu Sun, Yongsoo Joo, Yibo Chen, Dimin Niu, Yuan Xie, Yiran Chen, Hai Helen Li
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引用次数: 141

Abstract

In recent years, many systems have employed NAND flash memory as storage devices because of its advantages of higher performance (compared to the traditional hard disk drive), high-density, random-access, increasing capacity, and falling cost. On the other hand, the performance of NAND flash memory is limited by its “erase-before-write” requirement. Log-based structures have been used to alleviate this problem by writing updated data to the clean space. Prior log-based methods, however, cannot avoid excessive erase operations when there are frequent updates, which quickly consume free pages, especially when some data are updated repeatedly. In this paper, we propose a hybrid architecture for the NAND flash memory storage, of which the log region is implemented using phase change random access memory (PRAM). Compared to traditional log-based architectures, it has the following advantages: (1) the PRAM log region allows in-place updating so that it significantly improves the usage efficiency of log pages by eliminating out-of-date log records; (2) it greatly reduces the traffic of reading from the NAND flash memory storage since the size of logs loaded for the read operation is decreased; (3) the energy consumption of the storage system is reduced as the overhead of writing and reading log data is decreased with the PRAM log region; (4) the lifetime of NAND flash memory is increased because the number of erase operations are reduced. To facilitate the PRAM log region, we propose several management policies. The simulation results show that our proposed methods can substantially improve the performance, energy consumption, and lifetime of the NAND flash memory storage1.
混合固态存储架构,用于性能、能耗和生命周期的改进
近年来,许多系统都采用NAND闪存作为存储设备,因为它具有更高的性能(与传统硬盘驱动器相比)、高密度、随机访问、容量增加和成本降低等优点。另一方面,NAND闪存的性能受到其“先擦除后写入”要求的限制。基于日志的结构通过将更新的数据写入干净的空间来缓解这个问题。但是,先前的基于日志的方法无法避免在频繁更新时进行过多的擦除操作,这会迅速消耗空闲页面,特别是在重复更新某些数据时。在本文中,我们提出了一种用于NAND闪存存储的混合架构,其中日志区域使用相变随机存取存储器(PRAM)实现。与传统的基于日志的体系结构相比,它具有以下优点:(1)PRAM日志区域允许就地更新,通过消除过时的日志记录,显著提高了日志页面的使用效率;(2)它大大减少了从NAND闪存存储器读取的流量,因为为读取操作加载的日志大小减少了;(3)采用PRAM日志区域,减少了日志数据的读写开销,降低了存储系统的能耗;(4) NAND闪存的寿命增加,因为擦除操作的次数减少了。为了方便使用PRAM日志区域,我们提出了几个管理策略。仿真结果表明,我们提出的方法可以显著提高NAND闪存存储的性能、能耗和寿命1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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