Analysis and Design of Transformer-Based mm-Wave Transmit/Receive Switches

E. Adabi, A. Niknejad
{"title":"Analysis and Design of Transformer-Based mm-Wave Transmit/Receive Switches","authors":"E. Adabi, A. Niknejad","doi":"10.1155/2012/302302","DOIUrl":null,"url":null,"abstract":"Transformer-based shunt single pole, double-throw (SPDT) switches are analyzed, and design equations are provided. A mm-wave transformer-based SPDT shunt switch prototype was designed and fabricated in 90 nm digital CMOS process. It has a minimum insertion loss of 3.4 dB at 50 GHz from the single pole to the ON-thru port and a leakage of 19 dB from the single pole to the OFF-thru port. The isolation is 13.7 dB between the two thru ports. Large signal measurements verify that the switch is capable of handling","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2012/302302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Transformer-based shunt single pole, double-throw (SPDT) switches are analyzed, and design equations are provided. A mm-wave transformer-based SPDT shunt switch prototype was designed and fabricated in 90 nm digital CMOS process. It has a minimum insertion loss of 3.4 dB at 50 GHz from the single pole to the ON-thru port and a leakage of 19 dB from the single pole to the OFF-thru port. The isolation is 13.7 dB between the two thru ports. Large signal measurements verify that the switch is capable of handling
基于变压器的毫米波收发开关的分析与设计
对基于变压器的并联单极双掷(SPDT)开关进行了分析,给出了设计公式。采用90 nm数字CMOS工艺设计并制作了基于毫米波变压器的SPDT并联开关样机。在50 GHz时,从单极到ON-thru端口的最小插入损耗为3.4 dB,从单极到OFF-thru端口的最小漏损为19 dB。两个直通端口之间的隔离度为13.7 dB。大信号测量验证开关能够处理
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