Linearity Analysis of BiCMOS Coherent TIAs

Xiaowei Liu, E. Bonizzoni, Yao Liu, F. Maloberti
{"title":"Linearity Analysis of BiCMOS Coherent TIAs","authors":"Xiaowei Liu, E. Bonizzoni, Yao Liu, F. Maloberti","doi":"10.1109/prime55000.2022.9816812","DOIUrl":null,"url":null,"abstract":"The linearity of a coherent TIA for optical transceivers is studied. The goal of the transimpedance gain is $ 74\\mathrm{d}\\mathrm{B}\\Omega$. The study of the design parameters that limit each block’s linearity provides design directions for a TIA with THD equal to or lower than 1%. The analytical study uses the Ebers-Moll model and achieves design criteria confirmed by transistor-level simulations, carried out using a $130\\mathrm{n}\\mathrm{m}$ BiCMOS process.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/prime55000.2022.9816812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The linearity of a coherent TIA for optical transceivers is studied. The goal of the transimpedance gain is $ 74\mathrm{d}\mathrm{B}\Omega$. The study of the design parameters that limit each block’s linearity provides design directions for a TIA with THD equal to or lower than 1%. The analytical study uses the Ebers-Moll model and achieves design criteria confirmed by transistor-level simulations, carried out using a $130\mathrm{n}\mathrm{m}$ BiCMOS process.
BiCMOS相干TIAs的线性分析
研究了光收发器相干TIA的线性度。跨阻增益的目标是$ 74\ mathm {d}\ mathm {B}\Omega$。对限制每个模块线性度的设计参数的研究为THD等于或低于1%的TIA提供了设计方向。分析研究使用Ebers-Moll模型,并通过使用$130\ mathm {n}\ mathm {m}$ BiCMOS工艺进行的晶体管级仿真验证了设计标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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