Design and defect tolerance beyond CMOS

X. Hu, A. Khitun, K. Likharev, M. Niemier, M. Bao, Kang L. Wang
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引用次数: 5

Abstract

It is well recognized that novel computational models, devices and technologies are needed in order to sustain the remarkable advancement of CMOS-based VLSI circuits and systems. Regardless of the models, devices and technologies, any enhancement/replacement to CMOS must show significant gains in at least one of the key metrics (including speed, power and cost) for at least a subset of application domains currently employing CMOS circuits. In addition, effective defect tolerant techniques are a critical factor for the successful adoption of any new computing device due to the fact that nano-scale structures will have defect rates much higher than today's CMOS chips. The task of identifying application domains that could benefit the most from a new model/device/technology and ensuring that the resultant system meets functional requirements in the presence of defects requires synergistic efforts of physical scientists, and circuit and system design researchers. This paper contains a collection of three contributions-each focusing on one particular emergent technology-presenting a basic introduction on the technologies, some of their unique features in contrast with CMOS, potential application domains for these technologies, and new opportunities that they may bring forward in defect tolerance design. The contributions include both traditional and nontraditional state representations which use either electronic or magnetic interactions.
超越CMOS的设计和缺陷容忍度
众所周知,为了维持基于cmos的VLSI电路和系统的显着进步,需要新的计算模型,器件和技术。无论采用何种型号、器件和技术,对CMOS的任何增强/替换都必须在至少一个关键指标(包括速度、功耗和成本)上取得显著进步,至少在目前使用CMOS电路的应用领域的一个子集上。此外,有效的缺陷容忍技术是成功采用任何新计算设备的关键因素,因为纳米级结构的缺陷率将比今天的CMOS芯片高得多。确定新模型/设备/技术的应用领域,并确保最终系统在存在缺陷的情况下满足功能需求,这一任务需要物理科学家、电路和系统设计研究人员的协同努力。本文包含三个贡献的集合-每个集中在一个特定的新兴技术-展示了对这些技术的基本介绍,它们与CMOS相比的一些独特特征,这些技术的潜在应用领域,以及它们可能在缺陷容限设计中提出的新机会。贡献包括使用电子或磁相互作用的传统和非传统状态表示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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