Characteristics and thermal stability of MOS devices with metal gate stacks of MoN and TiN

Abstract

In this work, a novel metal gate stack is proposed for PMOS applications. The influences of MoN metal gate with TiN layer above or below and various post-metal-annealing treatments were studied. Experimental results show that metal gate stack with TiN under MoN film exhibits better electrical characteristics and thermal stability despite a little lower work function.