Ballistic performance comparison of InGaSb and InAsSb XOI nFET

Abstract

Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.