A fully integrated 22.6dBm mm-Wave PA in 40nm CMOS

Farid Shirinfar, M. Nariman, T. Sowlati, M. Rofougaran, R. Rofougaran, S. Pamarti
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引用次数: 30

Abstract

A fully integrated 60GHz CMOS PA with a PSAT of 22.6dBm is presented. To our knowledge, this is the highest reported PSAT at mm-waves in standard CMOS. To achieve a high power level, 32 differential PAs are combined through a network of transmission lines, Wilkinson combiners, and a multi-port argyle transformer. This method of combining minimizes loss while implementing a low impedance load (~12Ω) at the drains of each of the last stage PAs. Electromigration and other reliability issues are discussed.
一个完全集成的22.6dBm毫米波PA在40nm CMOS
提出了一种全集成60GHz CMOS PA, PSAT为22.6dBm。据我们所知,这是标准CMOS中报道的毫米波最高PSAT。为了实现高功率水平,32个差分放大器通过传输线网络、威尔金森组合器和多端口弯道变压器组合。这种结合方法在每个最后级放大器的漏极处实现低阻抗负载(~12Ω)的同时最大限度地减少损耗。讨论了电迁移和其他可靠性问题。
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