An alytical modeling of response time and full well capacity of a pinned photo diode

Abstract

In this paper, we propose a time based approach to explain the behavior of a pinned photo diode both in intrinsic and extrinsic mode of operation. Based on this approach, analytical models for the response time and full well capacity are derived. The models show good agreement with the TCAD simulations. Further, the models derived are heavily dependent on the photocurrent parameter. So, the sensitivity of photocurrent to doping variations of the pinned photodiode for different junction depths is also studied with the help of TCAD simulations.