RF Characterization of GaAs HBT under Load Mismatch with Real-Time Load-Pull System

Abstract

RF PA is required to have sufficient reliability to protect them from mismatch. In this paper we present the RF characterization of Gallium Arsenide heterojunction bipolar transistor (GaAs HBT) transistors under load mismatched conditions. The mismatch test is carried out on an real-time active load-pull system with load mismatch of voltage standing-wave ratio (VSWR) of 10: 1. It is found that the 1-dB compressed RF output power (1 dB), transducer gain (GT), and power-added efficiency differ by 5 dBm,6dB, and 15%, respectively, between the optimal and worst phase conditions. This characterization method allows for a non-destructive way of monitoring of the device ruggedness and can be used in both manufacturing and device design stages.