A sub-1-ppm/°C curvature-compensated bandgap voltage reference

Meilin Wan, Haoshuang Gu, Zhenzhen Zhang
{"title":"A sub-1-ppm/°C curvature-compensated bandgap voltage reference","authors":"Meilin Wan, Haoshuang Gu, Zhenzhen Zhang","doi":"10.1109/ICAM.2016.7813567","DOIUrl":null,"url":null,"abstract":"A new sub-1-ppm/°C curvature-compensated bandgap voltage reference (BGR) is presented in this paper. The Complementary to Absolute Temperature (CTAT) voltage component of a forward biased BJT is first well balanced with a Proportional to Absolute Temperature (PTAT) voltage, leaving only a high order logarithmic error with the form of TlnT. This residual non-linear error is corrected by a difference of two CTAT voltages with different non-linear terms through controlling the collector currents of BJTs, which can achieve an ideal non-linear compensation. All the circuits are designed in a standard 0.35-pm CMOS process. The post-simulation results show the proposed BGR achieves temperature coefficient (TC) of 0.7 ppm/°C over temperature range of −40 °C to 125 °C and power supply rejection (PSR) of −104 dB at 3.6 V power supply. The line regulation of the output reference voltage is 0.1 mV/V in the supply range of 24.5 V. The maximum dissipating current from the supply is 25.45 μA.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2016.7813567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A new sub-1-ppm/°C curvature-compensated bandgap voltage reference (BGR) is presented in this paper. The Complementary to Absolute Temperature (CTAT) voltage component of a forward biased BJT is first well balanced with a Proportional to Absolute Temperature (PTAT) voltage, leaving only a high order logarithmic error with the form of TlnT. This residual non-linear error is corrected by a difference of two CTAT voltages with different non-linear terms through controlling the collector currents of BJTs, which can achieve an ideal non-linear compensation. All the circuits are designed in a standard 0.35-pm CMOS process. The post-simulation results show the proposed BGR achieves temperature coefficient (TC) of 0.7 ppm/°C over temperature range of −40 °C to 125 °C and power supply rejection (PSR) of −104 dB at 3.6 V power supply. The line regulation of the output reference voltage is 0.1 mV/V in the supply range of 24.5 V. The maximum dissipating current from the supply is 25.45 μA.
一个低于1 ppm/°C的曲率补偿带隙电压基准
本文提出了一种新的低于1 ppm/°C的曲率补偿带隙基准电压(BGR)。正向偏置BJT的绝对温度互补(CTAT)电压分量首先与绝对温度成比例(PTAT)电压平衡,只留下TlnT形式的高阶对数误差。通过对bjt集电极电流的控制,利用不同非线性项的CTAT电压差来校正这种非线性误差,达到理想的非线性补偿效果。所有电路都采用标准的0.35 pm CMOS工艺设计。后置仿真结果表明,在- 40 ~ 125℃的温度范围内,BGR的温度系数(TC)为0.7 ppm/°C,在3.6 V的电源下,电源抑制(PSR)为- 104 dB。在24.5 V供电范围内,输出参考电压的线路稳压为0.1 mV/V。电源的最大耗散电流为25.45 μA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信