Operating SECDED-based caches at ultra-low voltage with FLAIR

Moinuddin K. Qureshi, Zeshan A. Chishti
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引用次数: 36

Abstract

Voltage scaling is often limited by bit failures in large on-chip caches. Prior approaches for enabling cache operation at low voltages rely on correcting cache lines with multi-bit failures. Unfortunately, multi-bit Error Correcting Codes (ECC) incur significant storage overhead and complex logic. Our goal is to develop solutions that enable ultra-low voltage operation while incurring minimal changes to existing SECDED-based cache designs. We exploit the observation that only a small percentage of cache lines have multi-bit failures. We propose FLexible And Introspective Replication (FLAIR) that performs two-way replication for part of the cache during testing to maintain robustness, and disables lines with multi-bit failures after testing. FLAIR leverages the correction features of existing SECDED code to greatly improve on simple two-way replication. FLAIR provides a Vmin of 485mv (similar to ECC-8) and maintains robustness to soft-error, while incurring a storage overhead of only one bit per cache line.
使用FLAIR在超低电压下操作基于秒的缓存
在大型片上高速缓存中,电压缩放常常受到位故障的限制。先前在低电压下启用缓存操作的方法依赖于纠正具有多比特故障的缓存线路。不幸的是,多比特纠错码(ECC)带来了巨大的存储开销和复杂的逻辑。我们的目标是开发超低电压运行的解决方案,同时对现有的基于seced的缓存设计进行最小的更改。我们利用了只有一小部分缓存线路有多位故障的观察结果。我们提出灵活和内省复制(FLAIR),在测试期间对部分缓存执行双向复制以保持稳健性,并在测试后禁用具有多比特故障的线路。FLAIR利用现有SECDED代码的校正功能,大大改进了简单的双向复制。FLAIR提供了485mv的Vmin(类似于ECC-8),并保持了对软错误的稳健性,同时每条缓存线仅产生一个比特的存储开销。
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