Evaluation and optimization of physical unclonable function (PUF) based on the variability of FinFET SRAM

Abstract

FinFET variability, which is a small amplitude deviation caused by process, cannot be ignored with the scaling of CMOS. This work utilizes the variability as the random source of SRAM Physical Unclonable function (PUF). The impact of the variation has been simulated from device-level to circuit-level. Further research has been done with its influence on SRAM static noise margin (SNM) and SRAM PUF reliability, and the trade-off relation between them.