T. Jung, Yonghun Kwon, Sung-Uk Seo, Min-Sun Keel, Changkeun Lee, Sungsoo Choi, Sae-Young Kim, Sunghyuck Cho, Youngchan Kim, Young-Gu Jin, Moosup Lim, H. Ryu, Yitae Kim, Joonseok Kim, Changrok Moon
{"title":"A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors","authors":"T. Jung, Yonghun Kwon, Sung-Uk Seo, Min-Sun Keel, Changkeun Lee, Sungsoo Choi, Sae-Young Kim, Sunghyuck Cho, Youngchan Kim, Young-Gu Jin, Moosup Lim, H. Ryu, Yitae Kim, Joonseok Kim, Changrok Moon","doi":"10.2352/issn.2470-1173.2020.7.iss-103","DOIUrl":null,"url":null,"abstract":"\n An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process. 15000 e- of high full-well capacity (FWC) per a tap of 3.5 μm pitch and 3.6 e- of read-noise has been realized by employing true correlated\n double sampling (CDS) structure with storage gates (SGs). Noble characteristics such as 86 % of demodulation contrast (DC) at 100MHz operation, 37 % of higher quantum efficiency (QE) and lower parasitic light sensitivity (PLS) at 940 nm have been achieved. As a result, the proposed ToF sensor\n shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.\n","PeriodicalId":121190,"journal":{"name":"Imaging Sensors and Systems","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Imaging Sensors and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2352/issn.2470-1173.2020.7.iss-103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process. 15000 e- of high full-well capacity (FWC) per a tap of 3.5 μm pitch and 3.6 e- of read-noise has been realized by employing true correlated
double sampling (CDS) structure with storage gates (SGs). Noble characteristics such as 86 % of demodulation contrast (DC) at 100MHz operation, 37 % of higher quantum efficiency (QE) and lower parasitic light sensitivity (PLS) at 940 nm have been achieved. As a result, the proposed ToF sensor
shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.
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